US 12,237,049 B2
Semiconductor memory devices having efficient serializers therein for transferring data
Sanguk Lee, Suwon-si (KR); Daehyun Kwon, Suwon-si (KR); Jang-Woo Ryu, Suwon-si (KR); and Hangi Jung, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 7, 2022, as Appl. No. 18/052,976.
Claims priority of application No. 10-2022-0058616 (KR), filed on May 12, 2022.
Prior Publication US 2023/0368824 A1, Nov. 16, 2023
Int. Cl. G11C 7/22 (2006.01); G11C 7/10 (2006.01); G11C 11/4076 (2006.01); G11C 11/4093 (2006.01)
CPC G11C 7/222 (2013.01) [G11C 7/1093 (2013.01); G11C 7/1096 (2013.01); G11C 7/225 (2013.01); G11C 11/4076 (2013.01); G11C 11/4093 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An integrated circuit memory device, comprising:
a memory core;
control logic configured to control the memory core to: (i) output parallel data, and (ii) generate multiple internal clock signals in response to a clock signal received from a host; and
a data transmitting unit including a serializer configured to convert the parallel data into serial data, said serializer comprising:
a plurality of multiplexers that are each configured to output a respective inverted data signal based on one of the parallel data and two of the internal clock signals having different phases relative to each other; and
a serializing circuit configured to output the serial data by logically combining the inverted data signals output from the plurality of multiplexers; and
wherein each of the plurality of multiplexers acquires inverted data of the one of the parallel data between rising edges of the corresponding two internal clock signals and generates therefrom a corresponding one of the inverted data signals.