generating a read pulse that has a polarity opposite to that of a write pulse, wherein the write pulse writes data into a target memory cell in the self-selecting memory, wherein the read pulse has a first edge that is a starting point of the read pulse and a second edge that is an ending point of the read pulse;

adjusting a slope of the second edge of the read pulse wherein an undershoot or overshoot of the second edge of the read pulse increases; and

applying the read pulse to the target memory cell.