US 12,237,037 B2
Device of generating reference voltages for multi-level signaling and memory system including the same
Sang-Hoon Kim, Suwon-si (KR); and Sungyong Cho, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 9, 2023, as Appl. No. 18/151,784.
Claims priority of application No. 10-2022-0066303 (KR), filed on May 30, 2022.
Prior Publication US 2023/0386526 A1, Nov. 30, 2023
Int. Cl. G11C 7/00 (2006.01); G11C 5/14 (2006.01); H04L 25/49 (2006.01)
CPC G11C 5/147 (2013.01) [H04L 25/4917 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A reference voltage generation device comprising:
a noise information generation circuit configured to generate power noise information based on a first power noise and a second power noise, the first power noise and the second power noise generated based on a first power and a second power supplied to a first electronic device and propagated from the first electronic device to a second electronic device through a communication line, the first electronic device and the second electronic device configured to perform data communication using a multi-level signaling scheme; and
a reference voltage generation circuit configured to generate three or more reference voltages for the multi-level signaling scheme based on the power noise information, the second electronic device configured to use the three or more reference voltages,
wherein the noise information generation circuit includes a power noise transmitter electrically connected with the first power, the second power and a first terminal, and configured to output the first power noise and the second power noise to the first terminal.