US 12,237,035 B2
Semiconductor device and retention test method
Myeongjin Oh, Suwon-si (KR); Kyungjin Park, Suwon-si (KR); and Yongsuk Choi, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 23, 2023, as Appl. No. 18/113,165.
Claims priority of application No. 10-2022-0153661 (KR), filed on Nov. 16, 2022.
Prior Publication US 2024/0161860 A1, May 16, 2024
Int. Cl. G11C 29/00 (2006.01); G11C 29/50 (2006.01); G11C 29/54 (2006.01)
CPC G11C 29/54 (2013.01) [G11C 29/50004 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a memory test circuit configured to output a fourth signal having a logic level that is based on:
a logic level of a second signal corresponding to a first signal output by a host, and
a logic level of a third signal from a test logic;
a memory device configured to become active or inactive based on the logic level of the fourth signal; and
the test logic, wherein the test logic is configured to:
output the third signal, and
perform a retention test on the memory device based on the logic level of the second signal.