US 12,237,034 B2
Memory controller and memory system including the same
Hoyoun Kim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 15, 2023, as Appl. No. 18/380,185.
Claims priority of application No. 10-2022-0144728 (KR), filed on Nov. 2, 2022.
Prior Publication US 2024/0145025 A1, May 2, 2024
Int. Cl. G11C 29/00 (2006.01); G11C 7/10 (2006.01); G11C 29/52 (2006.01)
CPC G11C 29/52 (2013.01) [G11C 7/1039 (2013.01); G11C 7/1063 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory controller comprising:
an error correction code (ECC) circuit configured to receive a data burst and generate first ECC data or second ECC data; and
a processor configured to control operations of the ECC circuit,
wherein the ECC circuit comprises:
an ECC select circuit configured to select and output one of first ECC conversion data and second ECC conversion data, based on an ECC select signal received from an outside of the memory controller; and
an ECC conversion circuit configured to:
generate the first ECC data by encoding the data burst based on the first ECC conversion data, or
generate the second ECC data by encoding the data burst based on the second ECC conversion data, and
wherein the second ECC conversion data is set to be capable of correcting an error generated in one or more preset protected bits among bits included in each of pieces of partial data included in the data burst.