| CPC G11C 29/42 (2013.01) [G06F 3/0616 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01); G11C 16/26 (2013.01); G11C 16/3418 (2013.01); G11C 29/52 (2013.01); G11C 29/808 (2013.01)] | 13 Claims |

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1. An electronic device, comprising:
flash memory having a plurality of memory cells; and
a memory controller configured to determine a value indicative of an amount of radiation exposed to the electronic device, the memory controller further configured to perform based on the value at least one operation for compensating for charge leakage in the plurality of memory cells induced by the sensed radiation, wherein the at least one operation comprises adjusting a read voltage applied to at least a first memory cell of the plurality of memory cells based on the value, wherein the memory controller is configured to adjust the read voltage to compensate for the charge leakage if the value is in a first range, and wherein the memory controller is configured to perform a data refresh operation for the charge leakage if the value is in a second range greater than the first range.
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