| CPC G11C 29/12015 (2013.01) | 25 Claims |
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20. A method, comprising:
reading one or more bits that are stored in a mode register of a memory device and that indicate a test parameter to be used during a first time period in which a memory built-in self-test is to be performed,
wherein the test parameter indicates a refresh rate or a timing property that is to be used for memory cells of the memory device during the first time period in which the memory built-in self-test is to be performed;
performing the memory built-in self-test during the first time period and in accordance with the test parameter;
identifying a non-test parameter to be used during a second time period,
wherein the non-test parameter indicates a non-test refresh rate that is to be used while performing one or more read or write operations using the memory cells during the second time period, wherein the non-test refresh rate indicates a rate at which the memory cells are to be refreshed while the one or more read or write operations are being performed; and
performing the one or more read or write operations, using the memory cells, during the second time period and after performing the memory built-in self-test, wherein the one or more read or write operations are performed according to the non-test parameter.
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