CPC G11C 29/10 (2013.01) [G01R 31/2837 (2013.01); G01R 31/31725 (2013.01)] | 20 Claims |
1. A testing method, comprising:
inputting a first signal to a memory chip;
putting the memory chip into a self-refresh mode according to the first signal;
inputting an active command to test the memory chip so as to generate a first testing result according to the first signal, wherein an input time of the active command must be when the first signal is at a high electrical potential;
adjusting a bandwidth of the first signal to generate a second signal so as to input to the memory chip;
putting the memory chip into the self-refresh mode according to the second signal;
inputting the active command to test the memory chip so as to generate a second testing result according to the second signal, wherein the input time of the active command must be when the second signal is at a high electrical potential; and
calculating a self-refresh rate of the memory chip according to the first testing result and the second testing result.
|