US 12,237,025 B2
Memory device, memory system, and program operation method thereof
Yali Song, Wuhan (CN); Xiangnan Zhao, Wuhan (CN); and Ying Cui, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Feb. 23, 2023, as Appl. No. 18/113,617.
Application 18/113,617 is a continuation of application No. PCT/CN2022/141070, filed on Dec. 22, 2022.
Claims priority of application No. 202210573032.5 (CN), filed on May 24, 2022.
Prior Publication US 2023/0386587 A1, Nov. 30, 2023
Int. Cl. G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 16/102 (2013.01); G11C 16/24 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of program operation performed on a memory device, comprising:
at an ith programming loop, in response to determining that index i is greater than or equal to a first preset value and less than an initial verification loop number corresponding to a target state of memory cells in the memory device, performing an ith programming inhibition operation on the memory cells of the target state, index i being a positive integer, and the initial verification loop number indicating a programming loop number that starts a verification operation corresponding to the target state of the memory cells.