US 12,237,016 B2
Memory device, method for operating memory device, memory system
Xiaojiang Guo, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Dec. 28, 2022, as Appl. No. 18/090,409.
Application 18/090,409 is a continuation of application No. PCT/CN2021/115475, filed on Aug. 30, 2021.
Prior Publication US 2023/0148416 A1, May 11, 2023
Int. Cl. G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/102 (2013.01) [G11C 16/08 (2013.01); G11C 16/3459 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for operating a memory device, comprising:
applying a multi-plane programming scheme to simultaneously perform programming operations on at least two memory planes of the memory device; and
in response to determining that the at least two memory planes include an exceptional memory plane having a programming failure, switching to a single-plane programming scheme to sequentially perform programming operations on the at least two memory planes, comprising:
applying a first programming voltage on a selected word line on the exceptional memory plane, wherein the first programming voltage is less than a second programming voltage applied to the selected word line of the exception memory plane when it is determined that the exceptional memory plane has the programming failure.