US 12,237,013 B2
Integrated assemblies and methods of forming integrated assemblies
Shyam Surthi, Boise, ID (US); and Matthew Thorum, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 12, 2021, as Appl. No. 17/372,891.
Prior Publication US 2023/0011076 A1, Jan. 12, 2023
Int. Cl. H01L 23/532 (2006.01); G11C 16/04 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC G11C 16/0483 (2013.01) [H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 37 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a stack of alternating first and second levels;
a panel extending through the stack; and
the first levels having proximal regions adjacent the panel, and having distal regions further from the panel than the proximal regions; the distal regions comprising conductive structures, with said conductive structures having a first thickness; the proximal regions comprising insulative structures, with said insulative structures having a second thickness at least about as large as the first thickness; and
wherein the second levels comprise void regions between the distal regions of the first levels.