US 12,236,996 B2
Memory device and refresh method thereof
Eun Ae Lee, Suwon-si (KR); Sunghye Cho, Suwon-si (KR); Kijun Lee, Suwon-si (KR); Kyomin Sohn, Suwon-si (KR); and Myungkyu Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 14, 2023, as Appl. No. 18/197,084.
Claims priority of application No. 10-2022-0078492 (KR), filed on Jun. 27, 2022; and application No. 10-2022-0112925 (KR), filed on Sep. 6, 2022.
Prior Publication US 2023/0420027 A1, Dec. 28, 2023
Int. Cl. G11C 11/406 (2006.01)
CPC G11C 11/40622 (2013.01) [G11C 11/40615 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a plurality of counters respectively corresponding to a plurality of rows, and each configured to count a number of accesses to a corresponding row among the plurality of rows;
a plurality of first flags respectively corresponding to the plurality of rows;
a queue configured to store a plurality of addresses; and
a refresh control circuit configured to:
change a second flag set in a refresh period every refresh period, and
determine whether to put an incoming row address into the queue based on:
a count value of a counter, which corresponds to a target row indicated by the incoming row address among the plurality of rows, among the plurality of counters,
a first flag value of a first flag corresponding to the target row among the plurality of first flags, and
a second flag value of the second flag set in a current refresh period.