US 12,236,995 B2
Memory device, memory system having the same and method of operating the same
Jungmin You, Hwaseong-si (KR); and Seongjin Cho, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 30, 2024, as Appl. No. 18/426,503.
Application 18/426,503 is a continuation of application No. 17/724,942, filed on Apr. 20, 2022, granted, now 11,922,989.
Claims priority of application No. 10-2021-0128452 (KR), filed on Sep. 29, 2021.
Prior Publication US 2024/0170037 A1, May 23, 2024
Int. Cl. G11C 11/406 (2006.01); G11C 11/4093 (2006.01)
CPC G11C 11/40615 (2013.01) [G11C 11/40622 (2013.01); G11C 11/40626 (2013.01); G11C 11/4093 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a memory device comprising:
receiving a Refresh Management Mode (RFM) command with a register update bit from an external device;
latching weakness information by a weak pattern detector in response to the register update bit; and
updating at least one of a first value in a first mode register and a second value in a second mode register in response to an internal command,
wherein the first value and the second value correspond to the weakness information.