US 12,236,991 B1
Memory device performing refresh operation and method of operating the same
Eunae Lee, Hwaseong-si (KR); Sunghye Cho, Hwaseong-si (KR); Kijun Lee, Seoul (KR); Junjin Kong, Yongin-si (KR); and Yeonggeol Song, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 22, 2023, as Appl. No. 18/188,256.
Application 18/188,256 is a continuation of application No. 17/244,466, filed on Apr. 29, 2021, granted, now 11,631,448.
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/406 (2006.01); G06F 12/06 (2006.01); G11C 11/408 (2006.01)
CPC G11C 11/40611 (2013.01) [G06F 12/06 (2013.01); G11C 11/406 (2013.01); G11C 11/408 (2013.01); G06F 2212/70 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory cell array including a plurality of memory cells connected to a plurality of word-lines;
an address manager circuit configured to:
receive a refresh command from a memory controller;
perform sampling on a plurality of access addresses provided from the memory controller and determine a maximum access address among the plurality of access addresses based on count values associated with each of the plurality of access addresses;
randomly determine a capture time; and
identify an access address that is provided from the memory controller at the capture time as a capture address; and
a refresh controller circuit configured to select one of the maximum access address and the capture address as a refresh address and refresh target memory cells among the plurality of memory cells based on the refresh address.