US 12,236,989 B2
Layer structure for magnetic memory element, magnetic memory element, magnetic memory device, and method for storing data in magnetic memory element
Teruo Ono, Kyoto (JP)
Assigned to KYOTO UNIVERSITY, Kyoto (JP)
Appl. No. 18/015,455
Filed by KYOTO UNIVERSITY, Kyoto (JP)
PCT Filed Jul. 12, 2021, PCT No. PCT/JP2021/026111
§ 371(c)(1), (2) Date Jan. 10, 2023,
PCT Pub. No. WO2022/014529, PCT Pub. Date Jan. 20, 2022.
Claims priority of application No. 2020-121198 (JP), filed on Jul. 15, 2020.
Prior Publication US 2023/0282262 A1, Sep. 7, 2023
Int. Cl. G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01)
CPC G11C 11/161 (2013.01) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A layer structure for a magnetic memory element comprising
multiple first ferromagnetic layers with a switchable spin state, and
boundary layers each disposed between each pair of the multiple first ferromagnetic layers to form a domain wall,
the boundary layers being for generating ferromagnetic interaction between the multiple first ferromagnetic layers,
wherein the boundary layers are formed using a ferromagnetic material different from the first ferromagnetic layers.