US 12,236,880 B2
Pixel driving circuit, display panel and method for manufacturing same, and display device
Ran Li, Beijing (CN); Xueyan Tian, Beijing (CN); Hongwei Tian, Beijing (CN); Tuo Sun, Beijing (CN); and Xiyu Zhao, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 18/578,656
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed May 23, 2023, PCT No. PCT/CN2023/095670
§ 371(c)(1), (2) Date Jan. 11, 2024,
PCT Pub. No. WO2023/236770, PCT Pub. Date Dec. 14, 2023.
Claims priority of application No. 202210649930.4 (CN), filed on Jun. 9, 2022.
Prior Publication US 2024/0339077 A1, Oct. 10, 2024
Int. Cl. G09G 3/3233 (2016.01)
CPC G09G 3/3233 (2013.01) [G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/045 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A pixel driving circuit, comprising: a light emission control circuit and a drive circuit; wherein
the light emission control circuit is coupled to a gate signal terminal, a data signal terminal, a reset signal terminal, an initial power supply terminal, and a control terminal of the drive circuit, and the light emission control circuit is configured to control a potential of the control terminal of the drive circuit based on a gate driving signal provided by the gate signal terminal, a data signal provided by the data signal terminal, a reset signal provided by the reset signal terminal, and an initial power supply signal provided by the initial power supply terminal; and
an output terminal of the drive circuit is configured to be coupled to a light-emitting element, and the drive circuit is configured to transmit a light emission driving signal to the light-emitting element based on the potential of the control terminal of the drive circuit, to drive the light-emitting element to emit light;
wherein the drive circuit comprises a first drive transistor and a second drive transistor connected in parallel; and a subthreshold swing of one of the first drive transistor and the second drive transistor is greater than a subthreshold swing of the other one of first drive transistor and the second drive transistor.