CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0673 (2013.01)] | 13 Claims |
1. A memory device comprising:
N planes each including a plurality of memory cells;
a signal generation block suitable for:
selecting a control code corresponding to N selection values from N control codes respectively corresponding to the N planes, and
generating an operation control signal by decoding the selected control code;
N operation performing blocks each suitable for performing a predefined operation on a corresponding plane of the N planes according to a value of the operation control signal;
a signal transmission block suitable for transmitting the operation control signal to one of the N operation performing blocks through a path corresponding to the N selection values among N paths that connect the signal generation block to the respective N operation performing blocks; and
a selection control block suitable for activating at each time an input clock becomes a predetermined logic level, one of the N selection values, while deactivating remaining N selection values,
wherein the signal transmission block includes:
N signal storage units;
N storage control units suitable for storing the operation control signal in the respective N signal storage units during activation periods of the respective N selection values; and
N operation transmission units suitable for:
generating an operation execution signal according to the value of the operation control signal outputted by the respective N signal storage units during a predetermined period after deactivation of the respective N selection values, and
transmitting the operation execution signal to the respective N operation performing blocks through the respective N paths, where “N” is a natural number equal to or greater than 2.
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