US 12,236,105 B2
Semiconductor memory devices having enhanced refresh operations that inhibit row hammer hacking
Seong-Jin Cho, Hwaseong-si (KR); and Jung Min You, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 23, 2022, as Appl. No. 17/934,623.
Claims priority of application No. 10-2022-0004000 (KR), filed on Jan. 11, 2022; and application No. 10-2022-0051267 (KR), filed on Apr. 26, 2022.
Prior Publication US 2023/0221869 A1, Jul. 13, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0653 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor memory device, comprising:
a memory cell array having a plurality of rows of memory cells therein; and
a row hammer handler configured to generate a refresh address when performing a refresh operation on the plurality rows of memory cells, said row hammer handler comprising:
a weight distributor configured to: receive a plurality of row addresses, assign a weight to each of the plurality of row addresses thus received, and to generate weight data corresponding to each of the plurality of row addresses;
an aggress address generator configured to determine an aggress address of a row of memory cells based on the weight data; and
a refresh address generator configured to receive the aggress address and to generate the refresh address, which includes address information of a memory cell row adjacent the aggress address;
wherein the weight assigned to each of the plurality of row addresses thus received has a value that varies relative to the order in which it is received; and
wherein the weight data associated with each of the plurality of row addresses is a function of at least one weight associated with its order of receipt and a frequency of its receipt over a predetermined time interval.