US 12,235,757 B2
Memory systems and controllers for generating a command address and methods of operating same
Sungrae Kim, Suwon-si (KR); Sungyong Cho, Suwon-si (KR); Minho Maeing, Suwon-si (KR); Gilyoung Kang, Suwon-si (KR); Hyeran Kim, Suwon-si (KR); and Chisung Oh, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 17, 2023, as Appl. No. 18/318,906.
Claims priority of application No. 10-2022-0061032 (KR), filed on May 18, 2022; and application No. 10-2022-0116626 (KR), filed on Sep. 15, 2022.
Prior Publication US 2023/0376414 A1, Nov. 23, 2023
Int. Cl. G06F 11/10 (2006.01); G06F 12/06 (2006.01)
CPC G06F 12/06 (2013.01) [G06F 11/10 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system, comprising:
a host system including a memory controller configured to generate a command address signal, said memory controller comprising:
a first bit signal generator configured to generate a data signal as a plurality of data bits;
a second bit signal generator configured to generate a command address bus inversion bit (CABIB) having a high or low logic level that is a function of a number of data bits within the data signal having a predetermined logic level; and
a parity bit generator configured to set a parity signal to a first logic level when a total number of data bits within the data signal and the CABIB having a high logic level is an even number; and
a storage system configured to write or read data in response to the command address signal received from the host system.