US 12,235,624 B2
Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
Chunlei Zhang, Santa Clara, CA (US); Tao Zhang, San Ramon, CA (US); and Jairaj Payyapilly, San Bruno, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed on Dec. 21, 2021, as Appl. No. 17/557,816.
Prior Publication US 2023/0195078 A1, Jun. 22, 2023
Int. Cl. G05B 19/4155 (2006.01)
CPC G05B 19/4155 (2013.01) [G05B 2219/45212 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A method, comprising:
performing a deposition process on a substrate according to a plurality of steps of a process recipe, wherein the process recipe comprises a plurality of setting parameters, wherein each step of the plurality of steps comprises depositing one or more film layers on the substrate;
obtaining, using metrology equipment located within a process chamber performing the deposition process, a respective set of metrology data for each corresponding step of the plurality of steps, wherein the metrology data obtained by the metrology equipment comprises dimension data associated with one or more corresponding film layers of a plurality of film layers deposited on a surface of the substrate;
generating a correction profile based on the set of metrology data;
generating an updated process recipe by applying the correction profile to the process recipe; and
causing an etch process to be performed on the substrate according to the updated process recipe.