US 12,235,594 B2
Method for performing lithography process, light source, and EUV lithography system
Chi Yang, Tainan (TW); Ssu-Yu Chen, New Taipei (TW); Shang-Chieh Chien, New Taipei (TW); Chieh Hsieh, Taoyuan (TW); Tzung-Chi Fu, Miaoli (TW); Bo-Tsun Liu, Taipei (TW); Li-Jui Chen, Hsinchu (TW); and Po-Chung Cheng, Zhongpu Township, Chiayi County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 31, 2023, as Appl. No. 18/326,354.
Application 18/326,354 is a continuation of application No. 17/745,234, filed on May 16, 2022, granted, now 11,703,769.
Application 17/745,234 is a continuation of application No. 17/077,410, filed on Oct. 22, 2020, granted, now 11,333,983, issued on May 17, 2022.
Application 17/077,410 is a continuation of application No. 16/057,208, filed on Aug. 7, 2018, granted, now 10,824,083, issued on Nov. 3, 2020.
Claims priority of provisional application 62/564,566, filed on Sep. 28, 2017.
Prior Publication US 2023/0324813 A1, Oct. 12, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01); H05G 2/00 (2006.01)
CPC G03F 7/70891 (2013.01) [G03F 7/70025 (2013.01); G03F 7/70033 (2013.01); G03F 7/70533 (2013.01); H05G 2/008 (2013.01)] 20 Claims
OG exemplary drawing
 
14. An EUV lithography system for performing a lithography exposing process, comprising:
an EUV scanner; and
a light source configured to provide EUV radiation to the EUV scanner, wherein the light source comprises:
a collector configured to collect the EUV radiation and direct the EUV radiation to the EUV scanner;
a target droplet generator configured to provide a plurality of target droplets to a source vessel; and
a laser generator configured to provide a plurality of first laser pulses to irradiate the target droplets in the source vessel to generate plasma as the EUV radiation when a standard deviation of beam sizes of the first laser pulses is within a first standard deviation threshold value and a standard deviation of focal points of the first laser pulses is within a second standard deviation threshold value.