US 12,235,589 B2
Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device
Shinn-Sheng Yu, Hsinchu (TW); Ru-Gun Liu, Zhubei (TW); Hsu-Ting Huang, Hsinchu (TW); Kenji Yamazoe, Campbell, CA (US); Minfeng Chen, Hsinchu (TW); Shuo-Yen Chou, Hualien County (TW); and Chin-Hsiang Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 7, 2023, as Appl. No. 18/206,970.
Application 17/121,542 is a division of application No. 16/525,510, filed on Jul. 29, 2019, granted, now 10,866,525, issued on Dec. 15, 2020.
Application 18/206,970 is a continuation of application No. 17/733,664, filed on Apr. 29, 2022, granted, now 11,709,435.
Application 17/733,664 is a continuation of application No. 17/121,542, filed on Dec. 14, 2020, granted, now 11,320,747, issued on May 3, 2022.
Claims priority of provisional application 62/712,953, filed on Jul. 31, 2018.
Prior Publication US 2023/0333486 A1, Oct. 19, 2023
Int. Cl. G03F 7/00 (2006.01); G03F 7/20 (2006.01)
CPC G03F 7/70641 (2013.01) [G03F 7/2004 (2013.01); G03F 7/2022 (2013.01); G03F 7/70558 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
exposing a first portion of a photoresist layer disposed on a substrate to a first exposure dose of extreme ultraviolet radiation at a first focus position using a first portion of an extreme ultraviolet mask;
a first moving of the substrate relative to the extreme ultraviolet mask; and
exposing the first portion of the photoresist layer to a second exposure dose of extreme ultraviolet radiation using a second portion of the extreme ultraviolet mask at a second focus position, and simultaneously exposing a second portion of the photoresist layer to the second exposure dose at the second focus position using the first portion of the extreme ultraviolet mask.