US 12,235,578 B2
Organometallic solution based high resolution patterning compositions
Stephen T. Meyers, Corvallis, OR (US); Douglas A. Keszler, Corvallis, OR (US); Kai Jiang, Corvallis, OR (US); Jeremy T. Anderson, Corvallis, OR (US); and Andrew Grenville, Corvallis, OR (US)
Assigned to Inpria Corporation, Corvallis, OR (US)
Filed by Inrpia Corporation, Corvallis, OR (US)
Filed on Jun. 2, 2022, as Appl. No. 17/830,535.
Application 17/830,535 is a continuation of application No. 16/536,768, filed on Aug. 9, 2019, granted, now 11,988,958.
Application 16/536,768 is a continuation of application No. 16/007,242, filed on Jun. 13, 2018, granted, now 10,416,554, issued on Sep. 17, 2019.
Application 16/007,242 is a continuation of application No. 14/983,220, filed on Dec. 29, 2015, granted, now 10,025,179, issued on Jul. 17, 2018.
Application 14/983,220 is a continuation of application No. 13/973,098, filed on Aug. 22, 2013, granted, now 9,310,684, issued on Apr. 12, 2016.
Prior Publication US 2022/0365429 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01); G03F 7/09 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01)
CPC G03F 7/0042 (2013.01) [G03F 7/0043 (2013.01); G03F 7/09 (2013.01); G03F 7/20 (2013.01); G03F 7/2002 (2013.01); G03F 7/2037 (2013.01); G03F 7/30 (2013.01); G03F 7/32 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01)] 25 Claims
 
1. A method for forming a radiation patterned organometallic coating, the method comprising:
depositing a tin composition having organic ligands and hydrolysable ligands to form a radiation patternable organometallic coating comprising the organic ligands and oxo/hydroxo ligands formed during processing through hydrolysis with a dry thickness from about 1 nanometers (nm) to about 50 nm; and
irradiating the radiation patternable organometallic coating using patterned radiation to form a latent image,
wherein the radiation patternable organometallic coating comprises organic ligands bound with radiation sensitive Sn—C bonds and/or radiation sensitive Sn-carboxylate bonds and wherein the irradiating comprises EUV radiation at a dose from 3 mJ/cm2 to 150 mJ/cm2.