US 12,235,573 B2
EUV photomask and manufacturing method of the same
Feng Yuan Hsu, Yilan County (TW); Tran-Hui Shen, Yunlin County (TW); and Ching-Hsiang Hsu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 30, 2023, as Appl. No. 18/361,891.
Application 18/361,891 is a continuation of application No. 17/721,758, filed on Apr. 15, 2022, granted, now 11,782,338.
Application 17/721,758 is a continuation of application No. 16/542,179, filed on Aug. 15, 2019, granted, now 11,307,489, issued on Apr. 19, 2022.
Claims priority of provisional application 62/724,830, filed on Aug. 30, 2018.
Prior Publication US 2023/0384662 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/24 (2012.01)
CPC G03F 1/24 (2013.01) 20 Claims
 
1. A method, comprising:
providing a substrate;
depositing a reflective layer comprising molybdenum layers and silicon layers over the substrate;
depositing a capping layer over the reflective layer;
depositing an absorption layer over the capping layer; and
performing a treatment to form a border region comprising molybdenum silicide in the reflective layer.