	US 12,235,397 B2
	Radiation detector
Isao Takasu, Setagaya (JP); Atsushi Wada, Kawasaki (JP); Fumihiko Aiga, Kawasaki (JP); Kohei Nakayama, Kawasaki (JP); and Yuko Nomura, Kawasaki (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed on Aug. 30, 2021, as Appl. No. 17/460,942.
Claims priority of application No. 2020-185114 (JP), filed on Nov. 5, 2020.
Prior Publication US 2022/0140244 A1, May 5, 2022
Int. Cl. G01T 1/24 (2006.01); G01T 1/20 (2006.01); G01T 1/203 (2006.01); H10K 30/30 (2023.01); H10K 85/10 (2023.01); H10K 85/20 (2023.01); C09K 11/06 (2006.01); H10K 39/00 (2023.01); H10K 39/32 (2023.01)

CPC G01T 1/24 (2013.01) [G01T 1/2018 (2013.01); G01T 1/2033 (2013.01); H10K 30/30 (2023.02); H10K 85/113 (2023.02); H10K 85/215 (2023.02); C09K 11/06 (2013.01); H10K 39/32 (2023.02); H10K 39/501 (2023.02)]

5 Claims

1. A radiation detector, comprising:

a first layer including a first organic substance,

the first layer emits light based on beta rays incident on the first layer, and

a period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns;

a first conductive layer;

a second conductive layer located between the first layer and the first conductive layer; and

an organic semiconductor layer located between the first conductive layer and the second conductive layer, wherein

the period is not less than 0.1 s/m and not more than 100 s/m per unit thickness of the organic semiconductor layer.