chamber boundaries defining a deposition chamber having a deposition gas inlet at an upstream end and a gas outlet at a downstream end, the chamber boundaries defining a generally horizontal chamber passage configured to conduct gas flow along a gas flow direction therethrough, the chamber boundaries comprising quartz;

a susceptor configured to support a substrate thereon, the chamber boundaries above the susceptor being generally transparent to radiation energy;

a susceptor support ring positioned in the chamber passage between the gas inlet and the gas outlet;

a getter plate positioned generally horizontally within the deposition chamber, the getter plate extending generally parallel to the susceptor and extending laterally substantially across the deposition chamber;

a getter support comprising a support base and one or more first support posts, at least a portion of the getter support and at least one of the one or more first support posts comprising a coating comprising silicon carbide (SiC), the getter support being disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring; and

a getter support shelf configured to be disposed on a generally horizontal chamber boundary and to at least partially support the getter support, wherein the getter support shelf comprises: