US 12,234,552 B2
Semiconductor processing apparatus and methods for monitoring and controlling a semiconductor processing apparatus
Mohith Verghese, Phoenix, AZ (US); Todd Dunn, Cave Creek, AZ (US); and John Kevin Shugrue, Phoenix, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Apr. 5, 2023, as Appl. No. 18/131,170.
Application 18/131,170 is a division of application No. 15/917,224, filed on Mar. 9, 2018, granted, now 11,629,406.
Prior Publication US 2023/0243033 A1, Aug. 3, 2023
Int. Cl. C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/45544 (2013.01) [C23C 16/46 (2013.01); C23C 16/52 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of monitoring and controlling a semiconductor processing apparatus, comprising:
transferring a first substrate along a first transfer path through a tunnel structure between a wafer handling chamber and a first reaction chamber in a multiple chamber module, wherein the first path comprises a first length, wherein the tunnel structure is coupled to and spans between the wafer handling chamber and the multiple chamber module;
transferring a second substrate along a second transfer path through the tunnel structure between the wafer handling chamber and a second reaction chamber in the multiple chamber module, wherein the second path comprises a second length,
wherein the first substrate is transferred along the first transfer path substantially simultaneously with the second substrate being transferred along the second transfer path by a double-arm transfer robot,
wherein the first transfer path and the second transfer path are separate parallel paths through the tunnel structure, and wherein the first length of the first transfer path and the second length of the second transfer path are equal;
measuring a first temperature across the first substrate during the transferring the first substrate along the first transfer path by a first pyrometer coupled to the tunnel structure, wherein a first optical path of the first pyrometer intersects the first transfer path within the tunnel structure;
measuring a second temperature across the second substrate during the transferring the second substrate along the second transfer path by a second pyrometer coupled to the tunnel structure, wherein a second optical path of the second pyrometer intersects the second transfer path within the tunnel structure,
wherein the first pyrometer and the second pyrometer are positioned parallel to each other in terms of their positions along the respective transfer paths such that the first pyrometer and the second pyrometer substantially simultaneously measure the first temperature and the second temperature, respectively, as the transfer robot substantially simultaneously transfers the first substrate and the second substrate; and
comparing the first temperature and the second temperature.