US 12,234,548 B2
Methods of forming copper iodide layer and structures including copper iodide layer
Charles Dezelah, Helsinki (FI); Andrea Illiberi, Leuven (BE); Varun Sharma, Helsinki (FI); Bart Vermeulen, Helsinki (FI); and Michael Givens, Oud-Heverlee (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jan. 31, 2023, as Appl. No. 18/103,594.
Claims priority of provisional application 63/306,230, filed on Feb. 3, 2022.
Prior Publication US 2023/0243032 A1, Aug. 3, 2023
Int. Cl. C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01)
CPC C23C 16/30 (2013.01) [C23C 16/45553 (2013.01); C23C 16/56 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of forming a copper iodide layer on a surface of a substrate, the method comprising the steps of:
providing a substrate within a reaction chamber;
providing a copper precursor to the reaction chamber;
providing a reducing agent to the reaction chamber;
providing an iodine reactant to the reaction chamber; and
providing a dopant reactant to the reaction chamber.