	US 12,234,544 B2
	Sputtering target and method for producing sputtering target
Shuhei Murata, Ibaraki (JP); Masaya Iwabuchi, Ibaraki (JP); and Yusuke Sato, Ibaraki (JP)
Assigned to JX Advanced Metals Corporation, Tokyo (JP)
Appl. No. 18/026,437
Filed by JX Advanced Metals Corporation, Tokyo (JP)
PCT Filed Jun. 10, 2022, PCT No. PCT/JP2022/023495 § 371(c)(1), (2) Date Mar. 15, 2023, PCT Pub. No. WO2023/017667, PCT Pub. Date Feb. 16, 2023.
Claims priority of application No. 2021-131384 (JP), filed on Aug. 11, 2021.
Prior Publication US 2024/0026525 A1, Jan. 25, 2024
Int. Cl. C23C 14/34 (2006.01); B23K 20/02 (2006.01); C22C 9/06 (2006.01); C22C 21/06 (2006.01); H01J 37/34 (2006.01); B23K 101/34 (2006.01); B23K 103/18 (2006.01)

CPC C23C 14/3414 (2013.01) [B23K 20/02 (2013.01); B23K 20/023 (2013.01); C22C 9/06 (2013.01); C22C 21/06 (2013.01); H01J 37/3429 (2013.01); B23K 2101/34 (2018.08); B23K 2103/18 (2018.08)]

16 Claims

1. A sputtering target comprising a plurality of members including a target material and a base material,

wherein the plurality of members comprise a first member and a second member laminated to each other,

wherein the first member comprises Al, and the second member comprises Cu,

wherein at least one of the first member and the second member comprises Mg,

wherein the sputtering target comprises an alloy layer containing Al and Cu between the first member and the second member, the alloy layer being in contact with the first member and the second member, and

wherein the alloy layer further comprises an Mg-containing layer containing 5.0 at % or more of Mg in at least a part of the alloy layer.