US 12,234,543 B2
Method for preparing bismuth oxide nanowire films by heating in upside down position
Fuxian Wang, Guangzhou (CN); Liling Wei, Guangzhou (CN); Qiong Liu, Guangzhou (CN); and Hui Cheng, Guangzhou (CN)
Assigned to Institute of Analysis. Guangdong Academy of Sciences (China National Analytical Center, Guangzhou), Guangzhou (CN)
Appl. No. 17/423,470
Filed by Institute of Analysis, Guangdong Academy of Sciences (China National Analytical Center, Guangzhou), Guangzhou (CN)
PCT Filed Aug. 18, 2020, PCT No. PCT/CN2020/109676
§ 371(c)(1), (2) Date Jul. 15, 2021,
PCT Pub. No. WO2021/159680, PCT Pub. Date Aug. 19, 2021.
Claims priority of application No. 202010825523.5 (CN), filed on Aug. 17, 2020.
Prior Publication US 2022/0341027 A1, Oct. 27, 2022
Int. Cl. C23C 14/34 (2006.01); C23C 14/02 (2006.01); C23C 14/08 (2006.01); C23C 14/16 (2006.01); C23C 14/18 (2006.01); C23C 14/35 (2006.01); C23C 14/50 (2006.01); C23C 14/58 (2006.01); C25B 9/50 (2021.01); C25B 11/053 (2021.01); C25B 11/091 (2021.01)
CPC C23C 14/3407 (2013.01) [C23C 14/021 (2013.01); C23C 14/08 (2013.01); C23C 14/165 (2013.01); C23C 14/185 (2013.01); C23C 14/35 (2013.01); C23C 14/505 (2013.01); C23C 14/5853 (2013.01); C25B 9/50 (2021.01); C25B 11/053 (2021.01); C25B 11/091 (2021.01)] 10 Claims
OG exemplary drawing
 
1. A method for preparing a bismuth oxide nanowire film by heating in an upside down position, wherein a chemical formula of bismuth oxide is Bi2O3, and the method comprises:
washing a substrate, and fixing the substrate to a substrate support in a magnetron sputtering system in a position, wherein an electrically conductive surface of the substrate faces downwards in the position;
placing a bismuth target on a sputtering head in the magnetron sputtering system, wherein the bismuth target is adhered to a copper backing plate;
performing direct current magnetron sputtering to form a bismuth film on the electrically conductive surface of the substrate; and
regulating a heating temperature to maintain the bismuth film in a semi-molten state, and providing a predetermined oxygen gas concentration to form the bismuth oxide nanowire film.