US 12,234,383 B2
Low dishing oxide CMP polishing compositions for shallow trench isolation applications and methods of making thereof
Xiaobo Shi, Chandler, AZ (US); Krishna P. Murella, Phoenix, AZ (US); Joseph D. Rose, Gilbert, AZ (US); Hongjun Zhou, Chandler, AZ (US); and Mark Leonard O'Neill, Queen Creek, AZ (US)
Assigned to Versum Materials US, LLC, Tempe, AZ (US)
Appl. No. 17/998,517
Filed by Versum Materials US, LLC, Tempe, AZ (US)
PCT Filed May 25, 2021, PCT No. PCT/US2021/034054
§ 371(c)(1), (2) Date Nov. 11, 2022,
PCT Pub. No. WO2021/242755, PCT Pub. Date Dec. 2, 2021.
Claims priority of provisional application 63/032,233, filed on May 29, 2020.
Claims priority of provisional application 63/045,796, filed on Jun. 29, 2020.
Prior Publication US 2023/0193079 A1, Jun. 22, 2023
Int. Cl. C09G 1/02 (2006.01); H01L 21/321 (2006.01)
CPC C09G 1/02 (2013.01) [H01L 21/3212 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A chemical mechanical polishing composition comprising:
at least one ceria-coated inorganic oxide particles;
at least one silicone-containing compound comprising at least one selected from the group consisting of at least one ethylene oxide and propylene oxide (EO-PO) group, and at least one substituted ethylene diamine group;
at least one non-ionic organic molecule having at least two hydroxyl functional groups;
solvent;
optionally,
a biocide; and
pH adjuster,
wherein
the composition has a pH of 3 to 10, or 4 to 9; and
the at least one silicone-containing compound has a general molecular structure selected from the group consisting of:

OG Complex Work Unit Chemistry
wherein
a and a′ each is independently ranged from 0 to 50, or 0 to 20; wherein at least one of a and a′ is not 0;
b and c each is independently ranged from 0 to 50, or 0 to 20; wherein at least one of b and c is not 0;
n and m can be the same or different, and each is independently ranged from 1 to 12, or 1 to 5;
R and R′ can be the same or different, and each is independently selected from the group consisting of hydrogen; —(CH2)pCH3 with p ranged from 1 to 12 or 2 to 5; —NH2; —NH(CH2)q—NH2 with q ranged from 1 to 12 or from 2 to 5; ethylene oxide (EO) and propylene oxide (PO) repeating group -(EO)e—(PO)d—OH with d and e each independently selected from the group consisting of from 1 to 50, 1 to 40, 1 to 30, 1 to 20, 1 to 10, and 1 to 5; —COOH; —COOM; —COOR1; —R1COOH; —R1COOM; —R1COOR2; —SO3H; —SO3M; —R1SO3H; phosphonic acid;
phosphate salt selected from sodium, potassium or ammonium salts; benzyl; di-benzyl;
wherein R1 and R2 each is independently selected from the group consisting of —(CH2) m with m ranged from 1 to 12, and —(C6H4)n with n ranged from 1 to 4; and M is selected from the group consisting of sodium, potassium, and ammonium;

OG Complex Work Unit Chemistry
wherein
a is ranged from 0 to 50, or 0 to 20;
e and d can be the same or different, and each is independently ranged from 1 to 12;

OG Complex Work Unit Chemistry
wherein
R′ and R″ can be the same or different, and each is independently selected from the group consisting of hydrogen; —(CH2)pCH3 with p ranged from 1 to 12 or 2 to 5; —NH2; —NH(CH2)q—NH2 with q ranged from 1 to 12 or from 2 to 5; ethylene oxide (EO) and propylene oxide (PO) repeating group -(EO)e—(PO)d—OH with d and e each independently selected from the group consisting of from 1 to 50, 1 to 40, 1 to 30, 1 to 20, 1 to 10, and 1 to 5; —COOH; —COOM; —COOR1; —R1COOH; —R1COOM; —R1COOR2; —SO3H; —SO3M; —R1SO3H; phosphonic acid; phosphate salt selected from sodium, potassium or ammonium salts; benzyl; di-benzyl; wherein R1 and R2 each is independently selected from the group consisting of —(CH2)m with m ranged from 1 to 12, and —(C6H4)n with n ranged from 1 to 4; and M is selected from the group consisting of sodium, potassium, and ammonium; and
x, y, and z can be the same or different, and each is independently selected from 1 to 12; n−1 is from 2 to 13;
and
(4) combinations of (1), (2) and (3).