US 12,234,369 B2
Photoresist topcoat compositions and methods of processing photoresist compositions
Irvinder Kaur, Northborough, MA (US); Chunyi Wu, Shrewsbury, MA (US); Joshua A. Kaitz, Watertown, MA (US); Mingqi Li, Shrewsbury, MA (US); Doris Kang, Shrewsbury, MA (US); Xisen Hou, Lebanon, NH (US); and Cong Liu, Shrewsbury, MA (US)
Assigned to DuPont Electronic Materials International, LLC, Marlborough, MA (US)
Filed by Rohm and Haas Electronic Materials LLC, Marlborough, MA (US)
Filed on Dec. 17, 2018, as Appl. No. 16/222,064.
Claims priority of provisional application 62/612,512, filed on Dec. 31, 2017.
Prior Publication US 2019/0203065 A1, Jul. 4, 2019
Int. Cl. G03F 7/004 (2006.01); C09D 133/02 (2006.01); C09D 133/06 (2006.01); C09D 133/08 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01)
CPC C09D 133/02 (2013.01) [C09D 133/06 (2013.01); C09D 133/08 (2013.01); G03F 7/0046 (2013.01); G03F 7/11 (2013.01); G03F 7/162 (2013.01); G03F 7/2041 (2013.01); G03F 7/32 (2013.01)] 17 Claims
 
1. A photoresist topcoat composition, comprising:
a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition;
a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V):

OG Complex Work Unit Chemistry
wherein: R5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition;
a photoacid generator compound or a thermal acid generator compound; and
a solvent.