	US 12,234,193 B2
	Bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and preparation method and application thereof
Guowei Zhou, Shandong (CN); Jing Ren, Shandong (CN); Qinghua Gong, Shandong (CN); Bin Sun, Shandong (CN); Tingting Gao, Shandong (CN); and Xuefeng Sun, Shandong (CN)
Assigned to QILU UNIVERSITY OF TECHNOLOGY, Shandong (CN)
Appl. No. 17/298,677
Filed by QILU UNIVERSITY OF TECHNOLOGY, Shandong (CN)
PCT Filed Aug. 17, 2020, PCT No. PCT/CN2020/109620 § 371(c)(1), (2) Date Jun. 1, 2021, PCT Pub. No. WO2021/169196, PCT Pub. Date Sep. 2, 2021.
Claims priority of application No. 202010124370.1 (CN), filed on Feb. 27, 2020.
Prior Publication US 2022/0315492 A1, Oct. 6, 2022
Int. Cl. B01J 23/31 (2006.01); C04B 35/495 (2006.01); C04B 35/547 (2006.01); C04B 35/626 (2006.01)

CPC C04B 35/495 (2013.01) [B01J 23/31 (2013.01); C04B 35/547 (2013.01); C04B 35/62635 (2013.01); C04B 2235/326 (2013.01); C04B 2235/446 (2013.01); C04B 2235/528 (2013.01); C04B 2235/5436 (2013.01)]

9 Claims

1. A bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material, composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, wherein Bi₂WO₆is an orthorhombic system, Bi₂S₃is a p-type semiconductor located on a (130) crystal face, MoS₂is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets forms an outer layer; the average particle size of composite materials is in the range of 2.4-2.6 μm.