US 12,233,577 B2
Method for manufacturing a mould for nanoprinting and associated mould
Hubert Teyssedre, Grenoble (FR); Nicolas Posseme, Grenoble (FR); and Stefan Landis, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Appl. No. 18/693,438
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
PCT Filed Sep. 22, 2022, PCT No. PCT/EP2022/076451
§ 371(c)(1), (2) Date Mar. 19, 2024,
PCT Pub. No. WO2023/046870, PCT Pub. Date Mar. 30, 2023.
Claims priority of application No. 21 10075 (FR), filed on Sep. 24, 2021.
Prior Publication US 2024/0326297 A1, Oct. 3, 2024
Int. Cl. B29C 33/38 (2006.01); B29C 59/02 (2006.01)
CPC B29C 33/3842 (2013.01) [B29C 59/02 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for manufacturing a mould for nanoprinting, comprising:
providing a substrate comprising a layer having an upper face and a lower face opposite the upper face,
at least one ion implantation in at least one portion of the layer, the at least one ion implantation being configured so as to obtain within the layer at least one first portion, non-implanted or having a first implantation, and at least one second portion having a second implantation, the first implantation and the second implantation being different, the first and second portions each extending from the upper face, the at least one ion implantation further defining a third non-implanted portion, extending at least from the first portion, to the lower face of the layer,
after or before implantation, producing an etching mask, surmounting the upper face and having a plurality of openings, and
after implantation, etching the layer configured so as to have a different etching speed at least between the second portion and the third portion, so as to etch through the openings of the etching mask, a plurality of patterns of different heights included in the layer, at least one pattern extending into the first portion and at least one pattern extending into the second portion, the etching being configured to etch in the first portion, a first set of patterns and to etch in the second portion, a second set of patterns:
i. the first set of patterns having a first pattern density D1 and a first height H1, and
ii. the second set of patterns having a second pattern density D2, and a second height H2, and wherein D2>D1.