US 11,910,732 B2
Resistive memory devices using a carbon-based conductor line and methods for forming the same
Hung-Li Chiang, Taipei (TW); Chao-Ching Cheng, Hsinchu (TW); Tzu-Chiang Chen, Hsinchu (TW); and Lain-Jong Li, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on May 23, 2022, as Appl. No. 17/750,484.
Application 17/750,484 is a division of application No. 16/715,216, filed on Dec. 16, 2019, granted, now 11,349,069.
Prior Publication US 2022/0285612 A1, Sep. 8, 2022
Int. Cl. H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10B 63/24 (2023.02); H10B 63/84 (2023.02); H10N 70/021 (2023.02); H10N 70/8845 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of forming at least one resistive memory array over a substrate, wherein each of the at least one resistive memory array is formed by:
forming an array of rail structures that extend along a first horizontal direction over the substrate, wherein each of the rail structures comprises a respective lower bit line and a respective upper bit line;
forming dielectric isolation structures extending along a second horizontal direction over the array of rail structures, wherein sidewalls of the rail structures are physically exposed to line trenches located between neighboring pairs of the dielectric isolation structures;
forming a layer stack of a resistive memory material layer and a selector material layer within each of the line trenches; and
forming a word line on each of the layer stacks within unfilled volumes of the line trenches, wherein:
lower bit lines comprise a first material selected from a carbon-based conductive material containing hybridized carbon atoms in a hexagonal arrangement and a conductive material other than the carbon-based conductive material; and
the upper bit lines comprise a second material that is different from the first material and selected from the carbon-based conductive material and the conductive material other than the carbon-based conductive material.