US 11,910,731 B2
Embedded heater in a phase change memory material
Jin Ping Han, Yorktown Heights, NY (US); Philip Joseph Oldiges, Lagrangeville, NY (US); Robert L. Bruce, White Plains, NY (US); and Ching-Tzu Chen, Ossining, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Feb. 10, 2021, as Appl. No. 17/172,118.
Prior Publication US 2022/0254995 A1, Aug. 11, 2022
Int. Cl. H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10B 63/00 (2023.02); H10N 70/023 (2023.02); H10N 70/063 (2023.02); H10N 70/068 (2023.02); H10N 70/8413 (2023.02); H10N 70/8613 (2023.02); H10N 70/8833 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A phase change memory cell comprising:
a cone-shaped heater element on a first conductive layer, wherein the cone-shaped heater element is composed of a solid cone of a heater material;
a dielectric material completely surrounding angled sides of the cone-shaped heater element with a spacer on angled sides of the dielectric material; and
a phase change material over a top surface of the cone-shaped heater element, over the top surface and sides of the spacer on the angled sides of the dielectric material, and over a portion of a top surface of the dielectric material.