CPC H10N 70/231 (2023.02) [H10B 63/00 (2023.02); H10N 70/023 (2023.02); H10N 70/063 (2023.02); H10N 70/068 (2023.02); H10N 70/8413 (2023.02); H10N 70/8613 (2023.02); H10N 70/8833 (2023.02)] | 9 Claims |
1. A phase change memory cell comprising:
a cone-shaped heater element on a first conductive layer, wherein the cone-shaped heater element is composed of a solid cone of a heater material;
a dielectric material completely surrounding angled sides of the cone-shaped heater element with a spacer on angled sides of the dielectric material; and
a phase change material over a top surface of the cone-shaped heater element, over the top surface and sides of the spacer on the angled sides of the dielectric material, and over a portion of a top surface of the dielectric material.
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