US 11,910,649 B2
Display module with transistor
Tsang-Lung Chen, Miao-Li County (TW); Jhe-Ciou Jhu, Miao-Li County (TW); Jian-Yu Wang, Miao-Li County (TW); and Chia-Hao Hsieh, Miao-Li County (TW)
Assigned to InnoLux Corporation, Miao-Li County (TW)
Filed by InnoLux Corporation, Miao-Li County (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/874,242.
Application 17/874,242 is a continuation of application No. 16/813,753, filed on Mar. 10, 2020, granted, now 11,430,846.
Claims priority of application No. 201910209949.5 (CN), filed on Mar. 19, 2019.
Prior Publication US 2022/0367588 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/32 (2006.01); H01L 29/786 (2006.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01)
CPC H10K 59/1213 (2023.02) [H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H10K 59/123 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A substrate module, comprising:
a first substrate; and
a transistor unit disposed on the first substrate, wherein the transistor unit comprises:
an active layer, wherein the active layer has a first surface and a second surface, and the first surface is opposite to the second surface; and
a first electrode and a second electrode, wherein the first electrode and the second electrode at least partially overlap the active layer,
wherein the second surface contacts the first electrode and the second electrode,
wherein a first gallium concentration and a first zinc concentration exist within a first range in the active layer, the first range is adjacent to the second surface of the active layer, a second gallium concentration exists within a second range in the active layer, the second range is adjacent to the first surface of the active layer, the first gallium concentration is higher than the second gallium concentration, and the first zinc concentration is higher than the first gallium concentration.