CPC H10B 51/20 (2023.02) [H01L 23/535 (2013.01); H01L 29/41741 (2013.01); H01L 29/41775 (2013.01); H10B 51/00 (2023.02); H10B 51/10 (2023.02); H10B 51/30 (2023.02)] | 20 Claims |
1. A device comprising:
a word line extending in a first direction;
a data storage layer on a sidewall of the word line;
a channel layer on a sidewall of the data storage layer;
a back gate isolator on a sidewall of the channel layer; and
a bit line having a first main region and a first extension region, the first main region contacting the channel layer, the first extension region separated from the channel layer by the back gate isolator, the bit line extending in a second direction, the second direction perpendicular to the first direction.
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