US 11,910,599 B2
Contact structures for three-dimensional memory device
Zhongwang Sun, Hubei (CN); Guangji Li, Hubei (CN); Kun Zhang, Hubei (CN); Ming Hu, Hubei (CN); Jiwei Cheng, Hubei (CN); Shijin Luo, Hubei (CN); Kun Bao, Hubei (CN); and Zhiliang Xia, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Nov. 23, 2022, as Appl. No. 17/993,600.
Application 17/313,740 is a division of application No. 16/240,151, filed on Jan. 4, 2019, abandoned.
Application 17/993,600 is a continuation of application No. 17/313,740, filed on May 6, 2021, granted, now 11,552,091.
Application 16/240,151 is a continuation of application No. PCT/CN2018/120715, filed on Dec. 12, 2018.
Prior Publication US 2023/0086425 A1, Mar. 23, 2023
Int. Cl. H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 41/41 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01)
CPC H10B 41/27 (2023.02) [H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a film stack, comprising a dielectric layer and a conductive layer alternatingly stacked in a first direction;
a staircase structure disposed in the film stack and comprising a staircase step, wherein the staircase step comprises two or more alternatingly stacked dielectric layers and conductive layers;
a barrier layer and a first insulating layer disposed on the staircase structure; and
a coaxial contact structure disposed on the staircase step and extending through the first insulating layer and the barrier layer in the first direction, wherein:
the coaxial contact structure comprises a conductive ring, an insulating ring and a conductive core, wherein the insulating ring is disposed between the conductive ring and the conductive core;
a bottom surface of the conductive core contacts a lowermost conductive layer of the staircase step;
a bottom surface of the conductive ring contacts an upper conductive layer stacked above the lowermost conductive layer; and
a bottom surface of the insulating ring contacts a corresponding dielectric layer disposed between the lowermost conductive layer and the upper conductive layer of the staircase step.