US 11,910,598 B2
Microelectronic devices including support pillar structures, and related memory devices
Shuangqiang Luo, Boise, ID (US); Indra V. Chary, Boise, ID (US); and Justin B. Dorhout, Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 29, 2022, as Appl. No. 17/816,299.
Application 17/816,299 is a continuation of application No. 16/908,287, filed on Jun. 22, 2020, granted, now 11,417,673.
Prior Publication US 2022/0367500 A1, Nov. 17, 2022
Int. Cl. H10B 41/27 (2023.01); G11C 5/02 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 21/768 (2006.01); G11C 5/06 (2006.01); H10B 43/27 (2023.01)
CPC H10B 41/27 (2023.02) [G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 21/76838 (2013.01); H01L 23/5386 (2013.01); H01L 24/14 (2013.01); H10B 43/27 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A memory device, comprising:
strings of memory cells extending through a stack structure comprising alternating levels of insulative structures and conductive structures;
support pillar structures vertically extending through the stack structure to a source structure underlying the stack structure; and
a bridge structure extending between at least some of the support pillar structures neighboring one another.