CPC H10B 41/27 (2023.02) [G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 21/76838 (2013.01); H01L 23/5386 (2013.01); H01L 24/14 (2013.01); H10B 43/27 (2023.02)] | 15 Claims |
1. A memory device, comprising:
strings of memory cells extending through a stack structure comprising alternating levels of insulative structures and conductive structures;
support pillar structures vertically extending through the stack structure to a source structure underlying the stack structure; and
a bridge structure extending between at least some of the support pillar structures neighboring one another.
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