CPC H10B 12/34 (2023.02) [G11C 5/10 (2013.01); G11C 11/4023 (2013.01); H01L 28/91 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
a plurality of lower electrodes extending vertically from an upper surface of a substrate;
a first electrode support between adjacent lower electrodes of the plurality of lower electrodes, the first electrode support comprising a conductive material;
a dielectric layer on the plurality of lower electrodes and the first electrode support and extending along profiles of the first electrode support and each of the plurality of lower electrodes; and
an upper electrode on the dielectric layer and encircling at least one of the plurality of lower electrodes,
wherein the first electrode support is vertically over a portion of the upper electrode.
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