US 11,909,384 B2
Direct-drive D-mode GaN half-bridge power module
Di Chen, Kanata (CA)
Assigned to GaN Systems Inc.
Filed by GaN Systems Inc., Kanata (CA)
Filed on May 11, 2022, as Appl. No. 17/741,813.
Prior Publication US 2023/0370059 A1, Nov. 16, 2023
Int. Cl. H02H 3/24 (2006.01); H03K 17/08 (2006.01); H03K 17/22 (2006.01); H02M 1/36 (2007.01); H03K 17/687 (2006.01); H03K 17/0814 (2006.01)
CPC H03K 17/223 (2013.01) [H02H 3/243 (2013.01); H02M 1/36 (2013.01); H03K 17/08142 (2013.01); H03K 17/687 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A direct drive D-mode half-bridge power module comprising a high-side switch and a low-side switch connected in series, wherein the high-side switch is a D-mode normally-on GaN transistor switch (Q1) in series with an E-mode normally-off Si MOSFET switch (M1) and the low-side switch is a D-mode normally-on GaN transistor switch (Q2), wherein gates of the D-mode normally-on GaN transistor switches Q1 and Q2 are directly driven, and the gate of E-mode normally-off Si MOSFET M1 is directly driven by a control signal, wherein M1 acts as a protection FET to hold the high-side switch in an off-state during start-up and during a fault condition.