CPC H01S 5/187 (2013.01) [H01S 5/028 (2013.01); H01S 5/0262 (2013.01); H01S 5/0264 (2013.01); H01S 5/18 (2013.01); H01S 5/3202 (2013.01); H01S 5/0287 (2013.01)] | 21 Claims |
1. An optoelectronic device, comprising:
an off-cut III-V semiconductor substrate;
a set of epitaxial layers formed on the off-cut III-V semiconductor substrate;
a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers;
a first reflective structure oriented perpendicular to the off-cut III-V semiconductor substrate and bounding a first end of a horizontal portion of the laser resonant cavity; and
a second reflective structure oriented parallel to the off-cut III-V semiconductor substrate and bounding a first end of a vertical portion of the laser resonant cavity; wherein,
the first reflective structure has a first reflectivity different from a second reflectivity of the second reflective structure;
a first coating layer applied to the set of epitaxial layers is included in the first reflective structure and the second reflective structure; and
a second coating layer applied to the set of epitaxial layers is included in the first reflective structure and is absent in the second reflective structure.
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