US 11,909,175 B2
Horizontal cavity surface-emitting laser (HCSEL) monolithically integrated with a photodetector
Chih-Wei Chuang, Albany, CA (US); Peter L. Chang, San Jose, CA (US); and Tong Chen, Fremont, CA (US)
Assigned to Apple Inc., Cupertino, CA (US)
Filed by Apple Inc., Cupertino, CA (US)
Filed on Jan. 13, 2021, as Appl. No. 17/148,408.
Prior Publication US 2022/0224077 A1, Jul. 14, 2022
Int. Cl. H01S 5/18 (2021.01); H01S 5/187 (2006.01); H01S 5/026 (2006.01); H01S 5/028 (2006.01); H01S 5/32 (2006.01)
CPC H01S 5/187 (2013.01) [H01S 5/028 (2013.01); H01S 5/0262 (2013.01); H01S 5/0264 (2013.01); H01S 5/18 (2013.01); H01S 5/3202 (2013.01); H01S 5/0287 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An optoelectronic device, comprising:
an off-cut III-V semiconductor substrate;
a set of epitaxial layers formed on the off-cut III-V semiconductor substrate;
a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers;
a first reflective structure oriented perpendicular to the off-cut III-V semiconductor substrate and bounding a first end of a horizontal portion of the laser resonant cavity; and
a second reflective structure oriented parallel to the off-cut III-V semiconductor substrate and bounding a first end of a vertical portion of the laser resonant cavity; wherein,
the first reflective structure has a first reflectivity different from a second reflectivity of the second reflective structure;
a first coating layer applied to the set of epitaxial layers is included in the first reflective structure and the second reflective structure; and
a second coating layer applied to the set of epitaxial layers is included in the first reflective structure and is absent in the second reflective structure.