CPC H01S 5/026 (2013.01) [G01S 7/4812 (2013.01); G01S 7/4913 (2013.01); G01S 7/4916 (2013.01); G01S 7/4917 (2013.01); H01L 31/035236 (2013.01); H01S 5/18361 (2013.01); H01S 5/34 (2013.01)] | 20 Claims |
1. An optical sensor system, comprising:
a semiconductor substrate;
a set of epitaxial layers formed on the semiconductor substrate and defining,
a semiconductor laser having a first multiple quantum well (MQW) structure, wherein electromagnetic radiation is generated by the first MQW structure, emitted from the first MQW structure, and self-mixed with a portion of the emitted electromagnetic radiation that is returned to the first MQW structure;
a second MQW structure, positioned on a first side of the first MQW structure and operable to generate a first photocurrent responsive to detecting a first emission of the semiconductor laser; and
a third MQW structure, positioned on a second side of the first MQW structure and operable to generate a second photocurrent responsive to detecting a second emission of the semiconductor laser, the second side opposite the first side; and
a circuit configured to generate a self-mixing interferometry (SMI) signal by combining the first photocurrent and the second photocurrent.
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