CPC H01L 29/785 (2013.01) [H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 29/401 (2013.01); H01L 29/66795 (2013.01)] | 20 Claims |
1. A method comprising:
forming fins over a substrate;
forming a dielectric layer over the fins;
removing a first portion of the dielectric layer to form a trench within the dielectric layer, wherein a subset of the fins is exposed in the trench, wherein at least one fin from the subset of the fins includes a semiconductor material layer that is exposed in the trench after the removing of the first portion of the dielectric layer;
removing a second portion of the dielectric layer to enlarge the trench; and
recessing the subset of fins in the enlarged trench.
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