US 11,908,936 B2
Double gate ferroelectric field effect transistor devices and methods for forming the same
Yen-Chieh Huang, Changhua County (TW); Song-Fu Liao, Hsinchu (TW); Po-Ting Lin, Hsinchu (TW); Hai-Ching Chen, Hsinchu (TW); Sai-Hooi Yeong, Zhubei (TW); Yu-Ming Lin, Hsinchu (TW); and Chung-Te Lin, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Sep. 21, 2021, as Appl. No. 17/480,463.
Claims priority of provisional application 63/180,245, filed on Apr. 27, 2021.
Prior Publication US 2022/0344513 A1, Oct. 27, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/51 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/78391 (2014.09) [H01L 29/41775 (2013.01); H01L 29/517 (2013.01); H01L 29/66969 (2013.01); H01L 29/7831 (2013.01); H01L 29/7869 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first dielectric material layer;
a first gate electrode laterally surrounded by the first dielectric material layer;
a multilayer structure over the first dielectric material layer and the first gate electrode, the multilayer structure comprising:
a first ferroelectric material layer;
a semiconductor channel layer over the first ferroelectric material layer; and
a second ferroelectric material layer over the semiconductor channel layer; and
source and drain electrodes contacting the semiconductor channel layer; and
a second gate electrode over the second ferroelectric material layer.