CPC H01L 29/78391 (2014.09) [H01L 29/41775 (2013.01); H01L 29/517 (2013.01); H01L 29/66969 (2013.01); H01L 29/7831 (2013.01); H01L 29/7869 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a first dielectric material layer;
a first gate electrode laterally surrounded by the first dielectric material layer;
a multilayer structure over the first dielectric material layer and the first gate electrode, the multilayer structure comprising:
a first ferroelectric material layer;
a semiconductor channel layer over the first ferroelectric material layer; and
a second ferroelectric material layer over the semiconductor channel layer; and
source and drain electrodes contacting the semiconductor channel layer; and
a second gate electrode over the second ferroelectric material layer.
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