US 11,908,909 B2
Fluorine-free interface for semiconductor device performance gain
Yu-Ting Tsai, New Taipei (TW); Chung-Liang Cheng, Changhua (TW); Hong-Ming Lo, Taiwan (TW); Chun-Chih Lin, Taipei (TW); and Chyi-Tsong Ni, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 29, 2022, as Appl. No. 17/816,062.
Application 17/816,062 is a division of application No. 17/225,835, filed on Apr. 8, 2021, granted, now 11,437,477.
Prior Publication US 2022/0384592 A1, Dec. 1, 2022
Int. Cl. H01L 29/41 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01)
CPC H01L 29/41775 (2013.01) [H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/4236 (2013.01); H01L 29/42384 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an active region;
an epitaxial source/drain in and extending above the active region;
a first dielectric layer over a portion of the active region;
a first metal gate and a second metal gate in the first dielectric layer;
a second dielectric layer over the first dielectric layer and the second metal gate;
a titanium layer on the first metal gate and on the epitaxial source/drain,
wherein the titanium layer is on the first metal gate without an intervening fluorine residual layer,
wherein the titanium layer is on the epitaxial source/drain with an intervening silicide layer;
a first metal layer on top of the titanium layer on the first metal gate;
a second metal layer on top of the titanium layer on the epitaxial source/drain;
a third dielectric layer on the second dielectric layer;
a first via, in the third dielectric layer, filled with a material;
a second via, in the third dielectric layer, filled with the material;
a metal layer on the third dielectric layer, the first via, and the second via; and
a fourth dielectric layer on portions of the metal layer.