CPC H01L 29/1087 (2013.01) [H01L 29/167 (2013.01); H01L 29/4933 (2013.01); H01L 29/6659 (2013.01)] | 20 Claims |
1. An integrated chip, comprising:
a substrate comprising a first semiconductor material;
a second semiconductor material disposed on the first semiconductor material, wherein the second semiconductor material is a group IV semiconductor or a group III-V compound semiconductor;
a passivation layer disposed on the second semiconductor material, wherein the passivation layer comprises the first semiconductor material; and
a first doped region and a second doped region extending through the passivation layer and into the second semiconductor material, wherein the first doped region has a first doping type and the second doped region has a second doping type that is different than the first doping type.
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