US 11,908,893 B2
Semiconductor device and method of forming the same
Hsin-Yi Lee, Hsinchu (TW); Cheng-Lung Hung, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,304.
Prior Publication US 2023/0060757 A1, Mar. 2, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01)
CPC H01L 29/0673 (2013.01) [H01L 27/0886 (2013.01); H01L 29/0843 (2013.01); H01L 29/1029 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
source and drain regions;
a channel region between the source and drain regions; and
a gate structure over the channel region and comprising:
a gate dielectric over the channel region;
a work function metal layer over the gate dielectric and comprising iodine, wherein the work function metal layer has an oxygen concentration in a range from about 10 at % to about 30 at % throughout the work function metal layer; and
a fill metal over the work function metal layer.