CPC H01L 28/10 (2013.01) | 20 Claims |
1. A semiconductor device structure, comprising:
a substrate;
a magnetic element over the substrate;
an isolation element over the magnetic element, wherein the magnetic element is wider than the isolation element;
a conductive line over the isolation element;
a second isolation element extending across the magnetic element, wherein the second isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element; and
a second conductive line over the second isolation element.
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